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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature INC NG S HA 2N5039 2N5038 2N5039 Open emitter CON EMI CONDITIONS TOR DUC VALUE 150 120 90 75 7 20 30 5 UNIT V Open base V V A A A W ae ae Open collector TC=25ae 140 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 IC=10A ; VCE=5V VCE=70V; IB=0 20 VCE=55V; IB=0 VCE=140V; VBE=-1.5V VCE=100V; VBE=-1.5V ;TC=150ae VCE=110V; VBE=-1.5V VCE=85V; VBE=-1.5V TC=150ae VEB=5V; IC=0 mA V 2.5 3.3 V V V 75 CONDITIONS MIN 90 V TYP MAX UNIT SYMBOL VCEO(SUS) VCEsat-1 Collector-emitter saturation voltage VCEsat-2 VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2N5038 VBE Base-emitter on voltage ICEO Collector cut-off current ICEX Collector cut-off current 2N5038 2N5039 2N5038 2N5039 2N5038 IEBO Emitter cut-off current hFE-1 DC current gain CHA IN NG S 2N5039 2N5038 2N5039 OND MIC E TOR UC 5.0 10 5.0 10 5 15 50 250 mA mA IC=2A ; VCE=5V IC=12A ; VCE=5V hFE-2 DC current gain IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 20 5 0.9 100 Is/b Second breakdown collector current A Switching times tr ts tf Rise time Storage time Fall time For 2N5038 IC=12A ;IB1=- IB2=1.2A ;VCC=30V For 2N5039 IC=10A ;IB1=- IB2=1A ;Vcc=30V 0.5 1.5 0.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5038 2N5039 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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